Type STD7NM60N STF7NM60N STP7NM60N STU7NM60N
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* VDSS @ TJmax RDS(on) max ID Pw 2 3 3 1 2 650 V < 0.9 Ω 4.7 A 45 W 20 W 45 W 45 W 1 IPAK TO-220 .

Figure 1. Internal schematic diagram Description This second generation of MDmesh™ technology, applies the benefits o.

This second generation of MDmesh™ technology, applies the benefits of the multiple drain process to STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product offers improved on-resistance, low gate charge, high dv/d.

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