Datasheet4U Logo Datasheet4U.com

STU40N2LH5 - N-channel Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Key Features

  • Type STD40N2LH5 STU40N2LH5.
  • VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STU40N01 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop Microelectronics
STU40N10 N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop Microelectronics
STU402D Dual N-Channel E nhancement Mode Field Effect Transistor SamHop Microelectronics
STU404D Dual N-Channel E nhancement Mode Field Effect Transistor SamHop Microelectronics
STU405D Dual N-Channel E nhancement Mode Field Effect Transistor SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STU4N52K3 N-channel Power MOSFET
STU4N80K5 N-CHANNEL MOSFET
STU10N60M2 N-CHANNEL POWER MOSFET
STU10NB80 N-channel Power MOSFET
STU10NM65N N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STD40N2LH5 STU40N2LH5 N-channel 25 V, 0.01 Ω , 40 A, DPAK, IPAK STripFET™ V Power MOSFET Preliminary Data Features Type STD40N2LH5 STU40N2LH5 ■ ■ ■ ■ ■ VDSS 25 V 25 V RDS(on) max 0.012 Ω 0.0126 Ω ID 40 A 40 A 3 3 2 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge High avalanche ruggedness Low gate drive power losses 1 DPAK IPAK Application ■ Switching applications Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1.