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STU3N65M6 - N-channel Power MOSFET

Description

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.

Features

  • Order code STU3N65M6 VDS 650 V RDS(on)max. 1.5 Ω.
  • Reduced switching losses.
  • Lower RDS(on) per area vs previous generation.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Zener-protected ID 3.5 A.

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Datasheet preview – STU3N65M6

Datasheet Details

Part number STU3N65M6
Manufacturer STMicroelectronics
File Size 440.18 KB
Description N-channel Power MOSFET
Datasheet download datasheet STU3N65M6 Datasheet
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Full PDF Text Transcription

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STU3N65M6 Datasheet N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh™ M6 Power MOSFET in an IPAK package TAB IPAK 3 2 1 D(2, TAB) G(1) S(3) AM01475V1 Features Order code STU3N65M6 VDS 650 V RDS(on)max. 1.5 Ω • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected ID 3.5 A Applications • Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs.
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