Datasheet4U Logo Datasheet4U.com

STU36NB20 - N-CHANNEL MOSFET

Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STU36L01A N-Channel Logic Level Enhancement Mode Field Effect Transistor SamHop Microelectronics
STU302S N-Channel Logic Level E nhancement Mode Field Effect Transistor SamHop Microelectronics
STU3030NL N-Channel Logic Level E nhancement Mode Field Effect Transistor SamHop Microelectronics
STU3030NLS N-Channel Logic Level E nhancement Mode Field Effect Transistor SamHop Microelectronics
STU303S P-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STU100N3LF3 N-channel Power MOSFET
STU10NA50 N-Channel Enhancement Mode Fast Power MOS Transistor
STU10NC70Z N-Channel MOSFET
STU10NC70ZI N-Channel MOSFET
STU10NM60N N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STU36NB20 N-CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET PRELIMINARY DATA TYPE STU36NB20 s s s s s s V DSS 200 V R DS(on) < 0.065 Ω ID 36 A TYPICAL RDS(on) = 0.052 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ± 30V GATE TO SOURCE VOLTAGE RATING 1 2 3 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
Published: |