STU2NK100Z mosfet equivalent, n-channel power mosfet.
TAB 3
2 1
IPAK
D(2, TAB)
Order code
VDS
STU2NK100Z
1000 V
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacitance
* Zener-p.
RDS(on) max. 8.5 Ω
ID 1.85 A
* Switching applications
G(1)
Description
This high-voltage device is a Zener-prote.
This high-voltage device is a Zener-protected N-channel Power MOSFET developed
S(3)
using the SuperMESH technology by STMicroelectronics, an optimization of the well-
AM01476v1_tab established PowerMESH. In addition to a significant reduction in .
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