STU1HN60K3 mosfet equivalent, n-channel power mosfet.
Order codes VDS STD1HN60K3
600 V STU1HN60K3
RDS(on) max
8Ω
ID PTOT 1.2 A 27 W
* 100% avalanche tested
* Extremely high dv/dt capability
* Gate charge mini.
* Switching applications
G(1) S(3)
AM01476v1
Description
These SuperMESH3™ Power MOSFETs are the result of improv.
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and.
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