STU16N65M2 Datasheet, STMicroelectronics

TAB Order code VDS RDS(on) max. ID STU16N65M2 650 V 360 mΩ 11 A 3 2 1
* Extremely low gate charge
* Excellent output capacitance (Coss) profile IPA.

* Switching applications G(1) Description This device is an N-channel Power MOSFET developed using MDmesh M2 S(3).

This device is an N-channel Power MOSFET developed using MDmesh M2 S(3) technology. Thanks to its strip layout and an improved vertical structure, the device AM01476v1_tab exhibits low on-resistance and optimized switching characteristics, render.