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STTH4R02 - Ultrafast recovery diode

General Description

The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection.

Table 1.

Key Features

  • Negligible switching losses.
  • High junction temperature.
  • Very low conduction losses.
  • Low forward and reverse recovery times.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STTH4R02 Ultrafast recovery diode . $ $ $ . 60% . . 60& . 1& $ 1& '3$. $ Features  Negligible switching losses  High junction temperature  Very low conduction losses  Low forward and reverse recovery times  ECOPACK®2 compliant component for DPAK on demand Datasheet  production data Description The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits. Packaged in DPAK, SMB and SMC, this device is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection. Table 1. Device summary Symbol Value IF(AV) VRRM VF (typ) Tj (max) trr (typ) 4A 200 V 0.76 V 175 °C 16 ns November 2016 This is information on a product in full production.