STTH4R02-Y datasheet, diode equivalent, STMicroelectronics

Features and benefits

* Very low conduction losses
* Negligible switching losses
* Low forward and reverse recovery times
* High junction temperature
* PPAP capable
* A.

Application

Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max.) VF (typ.) trr (typ.) 4A 200 V 175 °C 0.76 V 16 ns Apri.

Description

This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits. Packaged in SMB, SMC and DPAK, it is intended for use in low voltage, high frequency inverters, freewheel.

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