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STTH4R02-Y - Automotive ultrafast recovery diode

General Description

This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits.

Key Features

  • Very low conduction losses.
  • Negligible switching losses.
  • Low forward and reverse recovery times.
  • High junction temperature.
  • PPAP capable.
  • AEC-Q101 qualified.

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STTH4R02-Y Automotive ultrafast recovery diode Datasheet - production data K A K SMB A A K SMC K NC A DPAK Features  Very low conduction losses  Negligible switching losses  Low forward and reverse recovery times  High junction temperature  PPAP capable  AEC-Q101 qualified Description This device uses ST's new 200 V planar Pt doping technology, and it is especially suited for switching mode base drive and transistor circuits. Packaged in SMB, SMC and DPAK, it is intended for use in low voltage, high frequency inverters, freewheeling and polarity protection in automotive applications. Table 1: Device summary Symbol Value IF(AV) VRRM Tj (max.) VF (typ.) trr (typ.) 4A 200 V 175 °C 0.