STT4P3LLH6 mosfet equivalent, p-channel power mosfet.
Order code
VDS
RDS(on) max.
ID
STT4P3LLH6
30 V
56 mΩ at 10 V
4A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low.
* Switching applications
Description
G (3)
This device is a P-channel Power MOSFET developed using the STripFET H6 .
G (3)
This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
S (4)
PG3D1256S4
Product status link STT4P3LLH6
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