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STT3P2UH7 Datasheet, STMicroelectronics

STT3P2UH7 mosfet equivalent, p-channel power mosfet.

STT3P2UH7 Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 446.51KB)

STT3P2UH7 Datasheet
STT3P2UH7
Avg. rating / M : 1.0 rating-11

datasheet Download (Size : 446.51KB)

STT3P2UH7 Datasheet

Features and benefits

Order code STT3P2UH7 VDS 20 V RDS(on) max 0.1 Ω @ 4.5 ID 3A
* Very low on-resistance
* Very low capacitance and gate charge
* High avalanche ruggedness Ap.

Application


* Switching applications Description This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench g.

Description

This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations. Order code STT3P2UH7 Tab.

Image gallery

STT3P2UH7 Page 1 STT3P2UH7 Page 2 STT3P2UH7 Page 3

TAGS

STT3P2UH7
P-CHANNEL
POWER
MOSFET
STMicroelectronics

Manufacturer


STMicroelectronics (https://www.st.com/)

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