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STSJ80N4LLF3 - N-channel Power MOSFET

General Description

This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced.

Key Features

  • Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1) 1. This value is rated according to Rthj-pcb.
  • Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance PowerSO-8.

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www.DataSheet4U.com STSJ80N4LLF3 N-channel 40V - 0.0042Ω - 18A - PowerSO-8™ STripFET™III Power MOSFET for DC-DC conversion General features Type STSJ80N4LLF3 VDSS 40V RDS(on) 0.005Ω ID 18A(1) 1. This value is rated according to Rthj-pcb ■ ■ ■ ■ Optimal RDS(on) x Qg trade-off @ 4.5V Switching losses reduced Low threshold device Improved junction-case thermal resistance PowerSO-8 Description This series of product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This process coupled to unique metallization techniques realizes the most advanced low voltage Power MOSFET in SO-8 ever produced. The exposed slug reduces the Rthj-c improving the current capability.