STS9D8NH3LL datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

www.DataSheet4U.com Type Q1 Q2 VDSS 30V 30V RDS(on) < 0.022Ω < 0.015Ω Qg 7nC 8nC ID 8A 9A STS9D8NH3LL
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* Optimal RDS(on) x Qg trade-off @ 4.5V Condu.

Application

Figure 1. Internal schematic diagram Description This device uses the latest advanced design rules of ST’s STrip based .

Description

This device uses the latest advanced design rules of ST’s STrip based technology. The Q1 and Q2 transistors, show respectively, the best gate charge and on-resistance for minimizing the switching and conduction losses. This application specific Power.

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