Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6)
* AEC-Q101 qualified
* Very low on-resistance
* Very low gate.

* Switching applications PTOT 3.2 W S1(1) S2(3) SC12820 Description This device is a dual N-channel Power MOSFE.

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order.

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