STS7C4F30L
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s DC/DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT s POWER MANAGEMENT IN CELLULAR PHONES
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID ID IDM(- ) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Single Operating Drain Current (continuos) at TC = 100°C Single Operating Drain Current (pulsed) Total Dissipation at TC = 25°C Dual Operating Total Dissipation at TC = 25°C Single Operating Storage Temperature Max. Operating Junction Temperature N-CHANNEL 30 30 ± 20 7 4.4 28 1.6 2 -60 to 150 150 P-CHANNEL 30 30 ± 20 4...
