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STRH8N10 - 6A N-channel Power MOSFET

General Description

The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure.

It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE).

Qualified as per ESCC detail specification No.

Key Features

  • VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC.
  • Fast switching.
  • 100 % avalanche tested.
  • Hermetic package.
  • 50 krad TID.
  • SEE radiation hardened.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STRH8N10 Datasheet Rad-Hard 100 V, 6 A, N-channel Power MOSFET 2 1 3 SMD.5 D(3) G(1) S(2) SC3015C Product status link STRH8N10 Features VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC • Fast switching • 100 % avalanche tested • Hermetic package • 50 krad TID • SEE radiation hardened Description The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No. 5205/023 and available in SMD.