STRH8N10 Overview
The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as per ESCC detail specification No.
STRH8N10 Key Features
- Fast switching
- 100 % avalanche tested
- Hermetic package
- 50 krad TID
- SEE radiation hardened