VDS 100 V ID RDS(on) typ. Qgtyp. 6A 0.27 Ω 18.5 nC
* Fast switching
* 100 % avalanche tested
* Hermetic package
* 50 krad TID
* SEE radiation .

and suitable for in-Satellite power conversion, motor control and power switch circuits. In case of discrepancies betwee.

The STRH8N10 is a N-channel Power MOSFET able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID) and single event effects (SEE). Qualified as .

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