STRH40P10
Features
VDS 100 V
ID 34 A
- Fast switching
- 100% avalanche tested
- Hermetic package
- 100 krad
- SEE radiation hardened
RDS(on) typ. 60 mΩ
Qg 162 n C
Description
The STRH40P10 is a P-channel Power MOSFET developed with the Rad-Hard STrip FET technology in TO-254AA hermetic package and qualified as per ESCC detail specification No. 5205/025.
Designed for satellite application, it sustains high level of total ionized dose (TID) and immunity to heavy ions effects. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Part number STRH40P10HY1 STRH40P10HYG STRH40P10HYT
Product summary
Quality level
ESCC part number
Package
Engineering
- model
ESCC flight
5205/025
TO-254AA
Note:
See Table 8. Ordering information.
Lead finish
Gold
Solder dip
Radiation level
- 100 krad 100 krad
DS7072
- Rev 17
- June 2021 For further information contact your local STMicroelectronics sales office.
.st.
Note:...
