STRH100N10 Datasheet (PDF) Download
STMicroelectronics
STRH100N10

Description

The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package. Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification.

Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad
  • SEE radiation hardened RDS(on) typ. 30 mΩ Qg 135 nC