Download STRH100N10 Datasheet PDF
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STRH100N10 Description

The STRH100N10 is a N-channel Power MOSFET developed with the Rad-hard STripFET technology in hermetic TO-254AA package. Specifically designed to sustain Total Ionized Dose and immunity to heavy ion effects, it is qualified as per ESCC 5205/021 detail specification. In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.

STRH100N10 Key Features

  • Fast switching
  • 100% avalanche tested
  • Hermetic package
  • 50 krad
  • SEE radiation hardened
  • 50 krad
  • Rev 11
  • January 2021 For further information contact your local STMicroelectronics sales office