STR1P2UH7 mosfet equivalent, p-channel power mosfet.
Order code STR1P2UH7
VDS 20 V
RDS(on) max 0.1 Ω @ 4.5
ID 1.4 A
* Very low on-resistance
* Very low capacitance and gate charge
* High avalanche ruggedness.
* Switching applications
Description
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench g.
This P-channel Power MOSFET utilizes the STripFET H7 technology with a trench gate structure combined with extremely low onresistance. The device also offers ultra-low capacitances for higher switching frequency operations.
Order code STR1P2UH7
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