STQ1HNK60R-AP datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS STN1HNK60 STQ1HNK60R-AP 600 V
* Extremely high dv/dt capability
* 100% avalanche tested
* Gate charge minimized Applications
* Switch.

Application

* Switching applications RDS(on) max. 8.5 Ω ID 0.4 A Package SOT-223 TO-92 Description G(1) These high-voltage d.

Description

G(1) These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant S(3) reduction in on-resista.

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