Datasheet Details
| Part number | STPSC6H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 361.27 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet | STPSC6H065-STMicroelectronics.pdf |
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Overview: STPSC6H065 Datasheet 650 V, 6 A high surge silicon carbide power Schottky diode A K K TO-220AC K A K A K TO-220AC insulated K D²PAK A NC DPAK A.
| Part number | STPSC6H065 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 361.27 KB |
| Description | 650V power Schottky silicon carbide diode |
| Datasheet | STPSC6H065-STMicroelectronics.pdf |
|
|
|
This 6 A, 650 V SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Compare STPSC6H065 distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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