Datasheet Details
| Part number | STPSC6C065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 176.56 KB |
| Description | Automotive 650V power Schottky silicon carbide diode |
| Datasheet |
 STPSC6C065-Y Datasheet
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| Part number | STPSC6C065-Y |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 176.56 KB |
| Description | Automotive 650V power Schottky silicon carbide diode |
| Datasheet |
STPSC6C065-Y Datasheet
|
|
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The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
STPSC6C065-Y Automotive 650 V power Schottky silicon carbide diode $ .
.
72$& $ .
| Part Number | Description |
|---|---|
| STPSC6H065 | 650V power Schottky silicon carbide diode |
| STPSC6H065DLF | 650V power Schottky silicon carbide diode |
| STPSC6TH13TI | Dual 650V power Schottky silicon carbide diode |
| STPSC10065 | Schottky silicon carbide diode |
| STPSC10065DLF | power Schottky silicon carbide diode |
| STPSC1006D | 600 V power Schottky silicon carbide diode |
| STPSC10H065 | power Schottky silicon carbide diode |
| STPSC10H065-Y | Automotive 650V power Schottky silicon carbide diode |
| STPSC10H065BY-TR | Schottky silicon carbide diode |
| STPSC10H065DLF | power Schottky silicon carbide diode |