STPSC12C065-Y
STPSC12C065-Y is Automotive 650V power Schottky silicon carbide diode manufactured by STMicroelectronics.
Features
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- AEC-Q101 qualified
- PPAP capable
- ECOPACK®2 pliant ponent
- production data
Description
The Si C diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature and is ideal for automotive applications.
Especially suited for use as boost diode, this rectifier will enhance the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
Table 1. Device summary
Symbol
Value
IF(AV) VRRM Tj (max)
12 A 650 V 175 °C
January 2015
This is information on a product in full production.
Doc ID027332 Rev 1
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Characteristics
1 Characteristics
Table 2. Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value Unit
VRRM IF(RMS) IF(AV)
IFSM
IFRM
Repetitive peak reverse voltage, Tj = -40 °C
Forward rms current
Average forward current
Tc = 120 °C(1), δ = 0.5
Surge non repetitive forward current tp = 10 ms sinusoidal, Tc = 25 °C tp = 10 ms sinusoidal, Tc = 125 °C tp = 10 µs square, Tc = 25 °C
Repetitive peak forward current Tc = 120 °C(1), Tj = 175 °C, δ = 0.1
Tstg Storage temperature range Tj Operating junction temperature(2)
1. Value based on Rth(j-c) max. 2. d----d P---T--t--o-j---t < R-----t--h----(-1-j---- -----a----) condition to avoid thermal runaway for a diode on its own heatsink
650 22...
