Download STPSC12C065-Y Datasheet PDF
STPSC12C065-Y page 2
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STPSC12C065-Y Description

The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.

STPSC12C065-Y Key Features

  • No or negligible reverse recovery
  • Dedicated to PFC