STPSC12C065-Y
Overview
The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate.
- No or negligible reverse recovery
- Switching behavior independent of temperature
- Dedicated to PFC applications
- High forward surge capability
- AEC-Q101 qualified
- PPAP capable
- ECOPACK®2 compliant component Datasheet - production data
