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STMicroelectronics Electronic Components Datasheet

STPS1L30U Datasheet

LOW DROP POWER SCHOTTKY RECTIFIER

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® STPS1L30
LOW DROP POWER SCHOTTKY RECTIFIER
Table 1: Main Product Characteristics
IF(AV)
VRRM
Tj (max)
VF(max)
1A
30 V
150°C
0.3 V
FEATURES AND BENEFITS
Very low forward voltage drop for less power
dissipation
Optimized conduction/reverse losses trade-off
which means the highest yield in the
applications
Surface mount miniature packages
Avalanche capability specified
SMA
(JEDEC DO-214AC)
STPS1L30A
SMB
(JEDEC DO-214AA)
STPS1L30U
DESCRIPTION
Single Schottky rectifier suited to Switched Mode
Power Supplies and high frequency DC to DC con-
verters, freewheel diode and integrated circuit
latch up protection.
Packaged in SMA and SMB, this device is espe-
cially intended for use in parallel with MOSFETs in
synchronous rectification.
Table 2: Order Codes
Part Number
STPS1L30A
STPS1L30U
Table 3: Absolute Ratings (limiting values)
Symbol
Parameter
VRRM Repetitive peak reverse voltage
IF(RMS) RMS forward voltage
IF(AV) Average forward current
TL = 135°C δ = 0.5
IFSM Surge non repetitive forward current
tp = 10ms sinusoidal
IRRM Repetitive peak reverse current
tp = 2µs F = 1kHz square
IRSM Non repetitive peak reverse current
tp = 100µs square
PARM Repetitive peak avalanche power
tp = 1µs Tj = 25°C
Tstg Storage temperature range
Tj Maximum operating junction temperature *
dV/dt Critical rate of rise of reverse voltage
* : d----dP----T-t--o-j---t > R-----t--h----(-1--j-------a----) thermal runaway condition for a diode on its own heatsink
Marking
GB3
G23
Value
30
10
1
75
1
1
1500
-65 to + 150
150
10000
Unit
V
A
A
A
A
A
W
°C
°C
V/µs
August 2004
REV. 6
1/7


STMicroelectronics Electronic Components Datasheet

STPS1L30U Datasheet

LOW DROP POWER SCHOTTKY RECTIFIER

No Preview Available !

STPS1L30
Table 4: Thermal Resistance
Symbol
Rth(j-l) Junction to lead
Parameter
SMA
SMB
Value
30
25
Unit
°C/W
Table 5: Static Electrical Characteristics
Symbol
Parameter
Tests conditions
IR *
Reverse leakage current Tj = 25°C
Tj = 100°C
VR = VRRM
VF * Forward voltage drop
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
IF = 1A
IF = 2A
Min.
Typ Max.
200
6 15
0.395
0.26 0.3
0.445
0.325 0.375
Pulse test:
* tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 0.225 x IF(AV) + 0.075 IF2(RMS)
Unit
µA
mA
V
Figure 1: Average forward power dissipation
versus average forward current
Figure 2: Average forward current versus
ambient temperature (δ = 0.5)
PF(AV)(W)
0.50
0.45
0.40
δ = 0.05
δ = 0.1 δ = 0.2
δ = 0.5
0.35
0.30
0.25 δ = 1
0.20
0.15 T
0.10
0.05
IF(AV)(A)
δ=tp/T
0.00
0.0 0.2 0.4 0.6 0.8 1.0
tp
1.2
IF(AV)(A)
1.2
1.0
0.8
0.6
0.4
T
0.2
δ=tp/T
tp
0.0
0 25
Rth(j-a)=Rth(j-I)
Rth(j-a)=120°C/W
Rth(j-a)=100°C/W
Tamb(°C)
50 75
100
125
150
Figure 3: Normalized avalanche power
derating versus pulse duration
PARM(tp)
PARM(1µs)
1
0.1
0.01
0.001
0.01
0.1
tp(µs)
1 10
100 1000
Figure 4: Normalized avalanche power
derating versus junction temperature
PARM(tp)
PARM(25°C)
1.2
1
0.8
0.6
0.4
0.2
0
25
50
Tj(°C)
75 100 125 150
2/7


Part Number STPS1L30U
Description LOW DROP POWER SCHOTTKY RECTIFIER
Maker STMicroelectronics
Total Page 7 Pages
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