Order codes VDS @ TJmax RDS(on) max. ID STD9N60M2 STP9N60M2 650 V 0.78 Ω 5.5 A STU9N60M2
* Extremely low gate charge
* Excellent output capacitance (COSS.

* Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 techn.

These devices are N-channel Power MOSFETs developed using the MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitabl.

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