STP8N120K5 mosfet equivalent, n-channel power mosfet.
Order code
VDS
RDS(on) max.
STP8N120K5
1200 V
2.00 Ω
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge.
* Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tec.
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.
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