STP80NF55-08
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature
Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT
D2PAK TO-263
I2PAK TO-262
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol VDS VDGR VGS ID(- ) ID IDM(-
- ) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 55 55 ± 20 80 57 320 300 2 870 -55 to 175
(1) Starting...
