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STP80NF12 - N-CHANNEL POWER MOSFET

Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.

Features

  • Type STP80NF12 VDSS 120 V RDS(on) max < 0.018 Ω ID 80 A.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.

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STP80NF12 N-channel 120 V, 0.013 Ω typ., 80 A, STripFET™ II Power MOSFET in a TO-220 package Datasheet - production data TAB 3 2 1 TO-220 Features Type STP80NF12 VDSS 120 V RDS(on) max < 0.018 Ω ID 80 A • Exceptional dv/dt capability • 100% avalanche tested • Application oriented characterization Application • Switching applications Figure 1. Internal schematic diagram ' 7$% *  Description This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for telecom and computer applications. It is also intended for any applications with low gate drive requirements.
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