STP7NM60N mosfet equivalent, n-channel power mosfet.
TAB
Order code
VDS
RDS(on) max.
ID
Package
uct(s) TO-220
1 23
STP7NM60N
600 V
0.9 Ω
* 100% avalanche tested
* Low input capacitance and gate charge
* Switching applications
solete G(1) t(s) - Ob S(3)
AM01475v1_noZen
Description
This device is an N-channel Power.
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and g.
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