Click to expand full text
STP7NA60 STP7NA60FI
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STP7NA60 STP7NA60FI
s s s s s s s
V DSS 600 V 600 V
R DS( on) < 1Ω < 1Ω
ID 7.2 A 4.4 A
TYPICAL RDS(on) = 0.92 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE GHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD TO-220
3 1 2 1 2
3
DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
STP7NA60 Datasheet
