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STP70NS04ZC - N-channel Power MOSFET

Description

This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout.

Features

  • Type VDSS RDS(on) STP70NS04ZC Clamped < 10mΩ.
  • Low capacitance and gate charge.
  • 100% avalanche tested.
  • 175°C maximum junction temperature ID 80A.

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Full PDF Text Transcription

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STP70NS04ZC N-channel clamped 8mΩ - 80A TO-220 Fully protected SAFeFET™ Power MOSFET Features Type VDSS RDS(on) STP70NS04ZC Clamped < 10mΩ ■ Low capacitance and gate charge ■ 100% avalanche tested ■ 175°C maximum junction temperature ID 80A Description This fully clamped Power MOSFET is produced by using the latest advanced company’s Mesh OVERLAY process which is based on a novel strip layout. The inherent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation conditions such as those encountered in the automotive environment. Any other application requiring extra ruggedness is also recommended.
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