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STP6NB80 STP6NB80FP
N - CHANNEL 800V - 1.6 Ω - 5.7A - TO-220/TO-220FP PowerMESH ™ MOSFET
PRELIMINARY DATA TYPE ST P6NB80 ST P6NB80FP
s s s s s
V DSS 800 V 800 V
R DS(on) < 1.9 Ω < 1.9 Ω
ID 5.7 A 5.7 A
TYPICAL RDS(on) = 1.6 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
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2 2 DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances.
STP6NB80 Datasheet
