STP6NB80 Datasheet | STMicroelectronics

DESCRIPTION 1 1 Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an TO-220 TO-220FP advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge INTERNAL SCHEMATIC DIAGRAM and switching characteristics. . Data Shee APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( - ) P tot dv/dt( 1) V ISO Ts tg Tj Parameter Drain-source Voltage (VGS = 0) Drain- gate Voltage (R GS = 20 kΩ ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating F actor Peak Diode Recovery voltage slope Insulation W ithstand Voltage (DC) Storage Temperature Max. Operating Junction T emperature 5.7 3.6 22.8 125 1.0 4  -65 to 150 150 ( 1) ISD ≤ 5.76 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Value ST P6NB80 STP6NB80F P 800 800 ± 30 5.7(- ) 2 22.8 40 0.32 4 2000 Un it V V V A A A W W/ C V/ns V o o o (- ) Pulse width limited by safe operating area (- ) Limited only maximum temperature allowed September 1998 1/6 . Data Sheet 4 U . .. STP6NB80/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.0 62.5 0.5 300 TO220-FP 3.1 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink T yp Maximum Lead T emperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR, V DD = 50 V) Max Value 5.7 314 Unit A m...