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STP6NA60FP Datasheet ST Microelectronics

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Features and Benefits

oltage (R GS = 20 k Ω) Gate-source Voltage Drain Current (continuous) at T c = 25 o C o Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) St orage Temperature Max. Operating Junction Temperature Valu e.

STP6NA60FP STP6NA60FP STP6NA60FP
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CHANNEL
ENHANCEMENT
MODE
FAST
POWER
MOS
TRANSISTOR
STP6NA60FI
STP6NA60FP
STP6NA60
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