Datasheet4U Logo Datasheet4U.com

STP6NA60FP - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

📥 Download Datasheet

Datasheet preview – STP6NA60FP

Datasheet Details

Part number STP6NA60FP
Manufacturer STMicroelectronics
File Size 50.53 KB
Description N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
Datasheet download datasheet STP6NA60FP Datasheet
Additional preview pages of the STP6NA60FP datasheet.

📁 Similar Datasheet

  • STP6NA80 - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (STMicroelectronics)
  • STP6NA80FI - N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR (STMicroelectronics)
  • STP6N120K3 - N-channel MOSFET (STMicroelectronics)
  • STP6N50 - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
  • STP6N50FI - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR (STMicroelectronics)
  • STP6N60M2 - N-channel Power MOSFET (STMicroelectronics)
  • STP6N62K3 - N-channel Power MOSFET (STMicroelectronics)
  • STP6N65M2 - N-channel Power MOSFET (STMicroelectronics)
  • STP6N80K5 - N-channel Power MOSFET (STMicroelectronics)
  • STP6N80K5 - N-Channel MOSFET (INCHANGE)
Other Datasheets by ST Microelectronics
  • STP6NA60FI - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
  • STP6NA60 - N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
  • STP6N25 - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STP6N25FI - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
  • STP6N60FI - N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
  • STP6NB25 - N-CHANNEL MOSFET
  • STP6NB25FP - N-CHANNEL MOSFET
  • STP6NB50 - N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP6NA60F P s s s s s s s V DSS 600 V R DS(on) < 1.2 Ω ID 3.9 A TYPICAL RDS(on) = 1 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD 1 3 2 DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optmized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.
Published: |