STP60NF06L
DESCRIPTION
This MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements.
APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s AUTOMOTIVE ABSOLUTE MAXIMUM RATINGS
Symbol Parameter STB60NF06L STP60NF06L VDS VDGR VGS ID ID IDM(- ) Ptot dv/dt (1) EAS (2) VISO Tstg Tj due to Rth value
Value STP60NF06LFP 60 60 ± 15 60 42 240 110 0.73 20 320 ------55 to 175
(1) ISD ≤ 60A, di/dt ≤ 600A/µs, VDD ≤ 48V, T j ≤ TJMAX. (2) Starting T j = 25 o C, ID = 30A, VDD = 30V
Unit
Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C...
