STP55NE06L - N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
Description
This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure.
STP55NE06L STP55NE06LFP
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
TYPE STP55NE06L STP55NE06LF P
s s s s s s
V DSS 60 V 60 V
R DS(on) < 0.022 Ω < 0.022 Ω
ID 55 A 28 A
TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dV/dt CAPABILTY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dV/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION
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DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” process whereby a single body is implanted on a strip layout structure. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
STP55NE06L Datasheet
