STP4NM60 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type VDSS RDS(on) (@Tjmax) max )STD3NM60 t(sSTD3NM60-1 650 < 1.5 Ω cSTP4NM60 ID 3A 4A PW 42 W 69 W rodu
* High dv/dt and avalanche capabilities te P
* Imp.

Application

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* Switching roduDescription PModems technology applies the benefits of the temultiple drain process to STMicroelect.

Description

PModems technology applies the benefits of the temultiple drain process to STMicroelectronics' well- known PowerMESH™ horizontal layout structure. leThe resulting product offers low on-resistance, sohigh dv/dt capability and excellent avalanche Obcha.

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