STP3NB80FP
DESCRIPTION
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s UNINTERRUPTIBLE POWER SUPPLY(UPS) s DC-DC & DC-AC CONVERTERS FOR TELE, INDUSTRIAL AND CONSUMER ENVIRONMENT s
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (- ) P tot dv/dt( 1 ) VISO Tstg Tj
Drain-source Voltage (V GS = 0)
Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage
Drain Current (continuous) at T c = 25 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature
Drain...
