STP360N4F6 mosfet equivalent, n-channel power mosfet.
TAB
TAB
123
I²PAK
3 2 1
TO-220
Figure 1. Internal schematic diagram
'7$%
* 6
Order codes STI360N4F6 STP360N4F6
VDS 40 V
RDS(on) max.
ID
1.8 mΩ
120 .
and AEC-Q101 qualified
* Very low on-resistance
* Low gate charge
* High avalanche ruggedness
* Low gate.
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
$0Y
Order codes STI360N4F6 STP360N4F6
Table 1. Devi.
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