STP34NM60N mosfet equivalent, power mosfet.
Type STF34NM60N STP34NM60N STW34NM60N
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VDSS 600 V 600 V 600 V
RDS(on) max. 0.105 Ω 0.105 Ω 0.105 Ω
ID 29 A 29 A 29 A
PTOT 40 W 210 W 210 W
2 1 3
1 3 .
Figure 1. Internal schematic diagram
Description
These devices are made using the second generation of MDmeshTM technol.
These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is there.
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