TAB TO-220 1 23 D(2, TAB) Order code VDS STP2NK100Z 1000 V
* 100% avalanche tested
* Gate charge minimized
* Very low intrinsic capacitance
* Zen.

RDS(on) max. 8.5 Ω ID 1.85 A
* Switching applications G(1) Description This high-voltage device is a Zener-prote.

This high-voltage device is a Zener-protected N-channel Power MOSFET developed S(3) using the SuperMESH technology by STMicroelectronics, an optimization of the well- AM01476v1_tab established PowerMESH. In addition to a significant reduction in .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts