STP28NM50N datasheet, mosfet equivalent, ST Microelectronics

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Features and benefits

Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N
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* VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tes.

Application

Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technol.

Description

These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is there.

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