STP24N65M2 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order codes STB24N65M2 STF24N65M2 STP24N65M2 VDS 650 V RDS(on) max 0.23 Ω ID 16 A
* Extremely low gate charge
* Excellent output capacitance (Coss) profile

Application

* Switching applications Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technolog.

Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for .

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