STP240N10F7 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STP240N10F7 VDS RDS(on)max. ID 100 V 3.2 mΩ 110 A
* Ultra low on-resistance
* 100% avalanche tested Applications
* High current switching a.

Application

* High current switching applications Figure 1. Internal schematic diagram '7$% Description This N-channel Po.

Description

This N-channel Power MOSFET utilizes the STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. *.

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