Order code VDS STP20N90K5 900 V
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge
* 100% avalanche t.

* Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tec.

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.

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