Order code VDS RDS(on) max. STB20N60M2-EP 600 V 0.278 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* Very low turn-off s.

* Switching applications
* Tailored for very high frequency converters (f > 150 kHz) ID 13 A S(3) AM01475V1 .

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with v.

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