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STP1N120 - N-Channel Power MOSFET

Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Features

  • Type STP1N120.
  • VDSS 1200V RDS(on) < 38Ω ID 500mA PW 45W 100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark Gate charge minimized 1 3 2 TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STP1N120 N-channel 1200V - 30Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET PRELIMINARY DATA General features Type STP1N120 ■ ■ ■ ■ ■ VDSS 1200V RDS(on) < 38Ω ID 500mA PW 45W 100% avalanche tested Extremely high dv/dt capability ESD improved capability New high voltage benchmark Gate charge minimized 1 3 2 TO-220 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
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