| Part number | STP19N06L |
|---|---|
| Datasheet | STP19N06L_STMicroelectronics.pdf |
| File Size | 123.53 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 15 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions I D = 250 µ A T c = 100o C 19 Min. 2.5 0.1 0.2 Unit V Ω Ω A V GS = 5 V I D = 9.5 A V GS = 5 V I D = 9.5 A On State...
See all STMicroelectronics datasheets
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|---|---|
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