Datasheet Summary
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
N-channel 600 V
- 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages
- production data
3 1
D2PAK
3 2 1
TO-220FP
3 2 1
TO-220
3 2 1
TO-247
Figure 1. Internal schematic diagram
'7$%
- 6
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Features
Order codes
STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND
VDSS @ TJmax
650 V
RDS(on) max
<0.29 Ω 13 A
- The worldwide best RDS(on)- area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
Applications
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