STP18NM60ND
STP18NM60ND is N-channel Power MOSFET manufactured by STMicroelectronics.
Features
Order codes
STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND
VDSS @ TJmax
650 V
RDS(on) max
<0.29 Ω 13 A
- The worldwide best RDS(on)- area amongst the fast recovery diode devices
- 100% avalanche tested
- Low input capacitance and gate charge
- Low gate input resistance
- Extremely high dv/dt and avalanche capabilities
Applications
- Switching applications
Description
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance...
