Order code STP140N6F7 VDS 60 V RDS(on) max. 0.0035 Ω ID 80 A PTOT 158 W
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low.

* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced t.

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order .

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