TAB TO-220 1 23 D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STP11NM60ND 650 V 450 mΩ 10 A
* Fast-recovery body diode
* Low gate charge and i.

* Switching applications G(1) Description S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produ.

S(3) This FDmesh II Power MOSFET with fast-recovery body diode is produced using AM01475v1_noZen MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It .

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STP11NM60FP

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STP11N65M2

STP11N65M5

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